北京海外学人中心

吕长志

1996年赴美国伊利诺依大学和弗吉尼亚州立大学做访问学者。2000年回国，现任北京工业大学固态电子学研究所副所长。从事氮化镓基微电子器件方面的研究，合作研制出国内第一支调剂掺杂场效应晶体管，发表论文80余篇，取得国家发明专利六项，出版著作三部。曾荣获“第十五届全国发明展览会银奖”“第二届北京市留学人员创业奖”、“北京市科技进步三等奖”。

Lv Changzhi went to University of Illinois and Virginia State University, the US, as a visiting scholar in 1996. He came back to China in 2000 and now acts as the deputy director of Institute of Solid-State Electronics,Beijing University of Technology. He engages in researches on GaN-based microelectronic device. The outcome of his researches lies on the first domestic modulated-doping field effect transistor (MODFET) in addition to over published 80 academic essays and 6 domestic invention patents as wellas 3 books. He was honored Silver Prize of the Fifteenth National Invention Exhibition, the Second Beijing Venture Award for Outstanding Overseas Returnees and Third Beijing Prize for Progress in Science and Technology.

与美国、俄罗斯专家一起工作。

Mr. Lv works with American and Russian experts.

获得“第二届北京市留学人员创业奖”。

Mr. Lv receives the Second Beijing Venture Awardfor Outstanding Overseas Returnees.